Random-field Ising-type transition of pure and doped SBN from the relaxor into the ferroelectric state

被引：40

作者：

Dec, J ^{[1
]}

Kleemann, W

Bobnar, V

Kutnjak, Z

Levstik, A

Pirc, R

Pankrath, R

机构：

[1] Gerhard Mercator Univ, Lab Angew Phys, D-47048 Duisburg, Germany

[2] Jozef Stefan Inst, Ljubljana 1001, Slovenia

[3] Univ Osnabruck, Fachbereich Phys, D-49069 Osnabruck, Germany

来源：

EUROPHYSICS LETTERS | 2001年 / 55卷 / 06期

关键词：

D O I：

10.1209/epl/i2001-00348-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Activated critical dynamics and vanishing of the susceptibility ratio alpha (3)=chi (3)/chi (4)(1)-->0 in the zero-frequency limit unequivocally evidence the phase transitions of the uniaxial relaxor crystals SBN, SBN: Ce and SBN: Cr to refer to the three-dimensional random-field Ising universality class. The relaxor-like freezing of polar nanoregions within the precursor regime is successfully described within the framework of the mesoscopic uniaxial spherical random-bond random-field model.

引用

页码：781 / 787

页数：7

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