Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III-V Semiconductor Lasers

被引：14

作者：

Wang, Huolei ^{[1
]}

Kim, Dongwan ^{[1
]}

Harfouche, Mark ^{[2
]}

Santis, Christos T. ^{[1
]}

Satyan, Naresh ^{[3
]}

Rakuljic, George ^{[3
]}

Yariv, Amnon ^{[1
,2
]}

机构：

[1] CALTECH, Dept Appl Phys & Mat Sci, Pasadena, CA 91125 USA

[2] CALTECH, Dept Elect Engn, Pasadena, CA 91125 USA

[3] Telaris Inc, Santa Monica, CA 90403 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2017年 / 29卷 / 24期

关键词：

Hybrid integrated; silicon photonics; optical device fabrication; narrow linewidth; semiconductor lasers; ELECTRICAL ISOLATION; PROTON-BOMBARDMENT; ION-IMPLANTATION; SILICON; LAYERS; INP; NM;

D O I：

10.1109/LPT.2017.2771222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a narrow-linewidth heterogeneously integrated Si/III-V laser, where the current confinement in the III-V structure is obtained by oxide isolation rather than by the prevailing ion-implantation technique. This method provides effective electrical isolation as well as III-V surface passivation, and a pathway for high-efficiency diode injection laser performance. This method also offers increased compatibility with potentially high-temperature annealing processes. The lasers shown here possess a threshold current of as low as 60 mA and a single-facet output power of more than 3 mW at 20 degrees C. A linewidth of 28 kHz at 1574.8 nm is obtained at a current of 200 mA (I = 3.3 x I-th). Single-mode operation is achieved with a side-mode suppression ratio larger than 55 dB.

引用

页码：2199 / 2202

页数：4

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