Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III-V Semiconductor Lasers

被引:14
作者
Wang, Huolei [1 ]
Kim, Dongwan [1 ]
Harfouche, Mark [2 ]
Santis, Christos T. [1 ]
Satyan, Naresh [3 ]
Rakuljic, George [3 ]
Yariv, Amnon [1 ,2 ]
机构
[1] CALTECH, Dept Appl Phys & Mat Sci, Pasadena, CA 91125 USA
[2] CALTECH, Dept Elect Engn, Pasadena, CA 91125 USA
[3] Telaris Inc, Santa Monica, CA 90403 USA
关键词
Hybrid integrated; silicon photonics; optical device fabrication; narrow linewidth; semiconductor lasers; ELECTRICAL ISOLATION; PROTON-BOMBARDMENT; ION-IMPLANTATION; SILICON; LAYERS; INP; NM;
D O I
10.1109/LPT.2017.2771222
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate a narrow-linewidth heterogeneously integrated Si/III-V laser, where the current confinement in the III-V structure is obtained by oxide isolation rather than by the prevailing ion-implantation technique. This method provides effective electrical isolation as well as III-V surface passivation, and a pathway for high-efficiency diode injection laser performance. This method also offers increased compatibility with potentially high-temperature annealing processes. The lasers shown here possess a threshold current of as low as 60 mA and a single-facet output power of more than 3 mW at 20 degrees C. A linewidth of 28 kHz at 1574.8 nm is obtained at a current of 200 mA (I = 3.3 x I-th). Single-mode operation is achieved with a side-mode suppression ratio larger than 55 dB.
引用
收藏
页码:2199 / 2202
页数:4
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