Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing

被引：23

作者：

Cho, Woo-Suhl ^{[1
]}

Luisier, Mathieu ^{[1
]}

Mohata, Dheeraj ^{[2
]}

Datta, Suman ^{[2
]}

Pawlik, David ^{[3
]}

Rommel, Sean L. ^{[3
]}

Klimeck, Gerhard ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, Network Computat Nanotechnol, W Lafayette, IN 47906 USA

[2] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

[3] Rochester Inst Technol, Dept Elect & Microelect Engn, Rochester, NY 14623 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 06期

关键词：

DESIGN;

D O I：

10.1063/1.3682506

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A homo-junction In0.53Ga0.47As tunneling diode is investigated using full-band, atomistic quantum transport approach based on a tight-binding model (TB) and the non-equilibrium Green's function formalism. Band gap narrowing (BGN) is included in TB by altering its parameters using the Jain-Roulston model [S. C. Jain and D. J. Roulston, Solid-State Electron. 34, 453 (1991)]. BGN is found to be critical in the determination of the current peak and the second turn-on in the forward bias region. Empirical excess current that mimics additional recombination paths must be added to the calculation to model the diode behavior in the valley current region. Overall, the presented model reproduces experimental data well. (C) 2012 American Institute of Physics. [doi:10.1063/1.3682506]

引用

页数：3

共 12 条

[1] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J].