Properties study of silicon carbide thin films prepared by electron cyclotron resonance plasma technology

被引：2

作者：

Valovic, A. ^{[1
]}

Huran, J. ^{[1
]}

Kucera, M. ^{[1
]}

Kobzev, A. P. ^{[2
]}

Gazi, S. ^{[1
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia

[2] Joint Inst Nucl Res, Dubna 141980, Russia

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2011年 / 56卷 / 02期

关键词：

OPTICAL-EMISSION SPECTROSCOPY; SIC-H FILMS;

D O I：

10.1051/epjap/2011110153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon carbide films were deposited at two deposition temperatures 350 degrees C and 450 degrees C by means of ECR plasma reactor with two gas mixtures: (1) gas mixture, SiH4 (5 sccm), CH4 (14 sccm), Ar (6 sccm), NH3 (2 sccm) and (2) gas mixture SiH4 (5 sccm), CH4 (14 sccm), H-2 (6 sccm), NH3 (2 sccm). The concentration of species in the SiC films was determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD) analytical method simultaneously. Chemical compositions were analyzed by infrared (IR) spectroscopy. Photoluminescence (PL) spectra were measured at 300 K. The RBS and ERD results showed that the concentrations of Si and C in the films are practically the same. The concentration of hydrogen decreased from 30 to 22 at.% with an increasing sample deposition temperature. The films contain a small amount of nitrogen and oxygen. IR results showed the presence of Si-C, Si-N, Si-H, C-H and Si-O bonds. PL results showed the decrease of the PL intensity with an increasing sample deposition temperature.

引用

页数：4

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