X-ray reflectivity study of radio frequency sputtered silicon oxide on silicon

被引：3
作者：
Solina, DM
Cheary, RW
Kalceff, W
McCredie, G
机构：
[1] GKSS Forschungzentrum, D-21502 Geesthacht, Germany
[2] Univ Technol Sydney, Dept Appl Phys, Broadway, NSW 2007, Australia
来源：
THIN SOLID FILMS | 2005年 / 489卷 / 1-2期
基金：
澳大利亚研究理事会;
关键词：
X-ray reflectivity; silicon dioxide; silicon; sputtering;
D O I：
10.1016/j.tsf.2005.04.092
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An X-ray reflectivity study carried out on 45-450 angstrom films of radio frequency sputtered silicon oxide on silicon, with particular attention given to the interface between film and substrate. In order to model refectivity data it was necessary to include an interface layer for all films. This interface layer had a density approaching that of the substrate but due to differing compositions of the deposited film and substrate it was subject to a variation in scattering and absorption properties. (c) 2005 Elsevier B.V All rights reserved.
引用
收藏
页码：37 / 41
页数：5
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