Spin Hall effect device for magnetic sensor application

被引：0
|
作者：
Joo, Sungjung [1 ]
Kim, Dongseuk [2 ]
Lee, Hyung-kew [1 ]
Rhie, Kungwon [3 ]
机构：
[1] KRISS, Ctr Electromagnet Metrol, Daejeon 34113, South Korea
[2] KRISS, Quantum Technol Inst, Daejeon 34113, South Korea
[3] Fac Display & Semicond Phys, Sejong 30019, South Korea
来源：
2018 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2018) | 2018年
关键词：
magnetic sensor; spin Hall effect; ferromagnetic layer; FIELD SENSORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the spin Hall device was fabricated to magnetic sensor applications. This device based on the spin Hall effect by observing in ferromagnetic and heavy metal multi-layer structures. We measured shift of switching current with changing a z-component of small magnetic field through anomalous Hall effect measurement. The shift of switching current can be applied the magnetic sensor. Also, we controlled the sensitivity of this device changing efficiency of spin Hall effect. This device is a good candidate for magnetic sensor to measure a wide dynamic range of magnetic field.
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页数：2
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