Investigation of Set/Reset Operations in CMOS-Logic-Compatible Contact Backfilled RRAMs

被引：7

作者：

Chen, Hung-Yu ^{[1
]}

Chen, Hsien Hao ^{[2
]}

King, Ya-Chin ^{[2
]}

Lin, Chrong Jung ^{[2
]}

机构：

[1] United Microelect Corp, Hsinchu 30078, Taiwan

[2] Natl Tsing Hua Univ, Coll Elect Engn & Comp Sci, Hsinchu 30013, Taiwan

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2016年 / 16卷 / 03期

关键词：

Set/reset optimization of CMOS-logic-compatible contact RRAM; 1T1R architecture; oxide uniformity; logic NVM; STT-MRAM; CROSSBAR ARRAY; BIPOLAR RRAM; DEVICE;

D O I：

10.1109/TDMR.2016.2582211

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A contact resistive random access memory (RRAM) cell consisting of a W/TiON/SiO2/N+ silicon film stack realized using a new contact backfilled process is investigated. To precisely control RRAM film thicknesses on contact RRAM devices, in this paper, a new backfilling process of SiO2 deposition after contact etching via plasma-enhanced chemical vapor deposition is proposed and successfully demonstrated. In addition, set/reset optimization through the incremental step pulse programming scheme is applied, enabling the new contact backfilled RRAM devices to endure 1M P/E cycles, while maintaining a stable read window.

引用

页码：370 / 375

页数：6