Electron spin relaxation in InGaAs/InP multiple-quantum wells

被引：91

作者：

Tackeuchi, A ^{[1
]}

Wada, O ^{[1
]}

Nishikawa, Y ^{[1
]}

机构：

[1] FUJITSU LABS LTD, ATSUGI, KANAGAWA 24301, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 09期

关键词：

D O I：

10.1063/1.118506

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron spin relaxation of InGaAs/InP multiple-quantum wells (MQW) is investigated using time-resolved polarization-dependent absorption measurement. The MQW has an excitonic absorption at 1.54 mu m which is suitable for application in optical communications. A theoretical prediction assuming the D'yakonov-Perel' interaction as the main relaxation mechanism gives a spin relaxation rate for the InGaAs quantum well over twice as high as that for the GaAs quantum well. The spin relaxation time measured at room temperature is 5.2 ps and found to be an order of magnitude faster than that of a GaAs quantum well. (C) 1997 American Institute of Physics.

引用

页码：1131 / 1133

页数：3

共 25 条

[1]

Adachi S, 1996, APPL PHYS LETT, V68, P964, DOI 10.1063/1.116113

[2] EXCITON SPIN DYNAMICS IN GAAS HETEROSTRUCTURES [J].