High quality factor silicon-integrated spiral inductors achieved by using thick top metal with different passivation schemes

被引：0

作者：

Chu, SF ^{[1
]}

Chew, KW ^{[1
]}

Loh, WB ^{[1
]}

Wang, YM ^{[1
]}

Onn, BG ^{[1
]}

Ju, Y ^{[1
]}

Zhang, J ^{[1
]}

Shao, K ^{[1
]}

机构：

[1] Chartered Semicond Mfg Ltd, Mixed Signal RFCMOS Proc Integrat Grp, Singapore 738406, Singapore

来源：

2001 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERS | 2001年

关键词：

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

A novel approach combining 2 mum thick top metal, stacked design and different passivation schemes has been adopted to realize high quality factor (Q) inductors fabricated using a conventional 0.25 mum 5-level metal CMOS technology. Q-factor enhancement of greater than 50% at 2.45GHz has been achieved. It has been found that the passivation scheme utilizing 17k Angstrom of high density plasma (HDP) oxide is most effective in boosting the Q-factor. The above highlighted techniques can be easily implemented in any standard CMOS technology without additional increase in cost to the end-users.

引用

页码：154 / 157

页数：4

共 4 条

[1] Novel substrate contact structure for high-Q silicon-integrated spiral inductors
Burghartz, JN
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INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 55 - 58
[2] Experimental analysis of the effect of metal thickness on the quality factor in integrated spiral inductors for RF ICs
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IEEE ELECTRON DEVICE LETTERS, 2004, 25 (02) : 76 - 79
[3] High Quality Factor Extraction of Miniaturized Coupled Line Bandpass Filters Implemented Using RF Silicon Integrated Circuits
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[4] 2.4-GHz Complementary Metal Oxide Semiconductor Power Amplifier Using High-Quality Factor Wafer-Level Bondwire Spiral Inductor
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IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2013, 3 (08): : 1286 - 1292

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