Torsion Mode of the Magneto-Electric Effect in a Metglas/GaAs Layered Structure

This letter is devoted to the theoretical study of the magneto-electric (ME) effect in the magnetostrictive piezoelectric semiconductor structure of Metglas-gallium arsenide (GaAs) in torsion mode. Earlier, it was found that the ME effect significantly increases when passing from the low-frequency range to the region of electromechanical resonance (EMR). There are known results on the study of the ME effect in the range of different EMR modes: planar, flexural, and shear. In this letter, we consider the ME effect in the torsional mode region in a two-layer Metglas/GaAs composite. Interest in this phenomenon is associated both with the study of the new effect and with the possibility of studying the ME effect in the region of magneto-acoustic resonance, i.e., when the torsional mode coincides with the spin wave in the region of ferromagnetic resonance. The results obtained can find application in the design of new ME devices.