Simulation of GaSb:Te crystal growth in space experiment

被引：0

作者：

Prostomolotov, Anatoly I. ^{[1
]}

Verezub, Nataliya A. ^{[1
]}

Voloshin, Alexey E. ^{[2
]}

Nishinaga, Tatau ^{[3
]}

机构：

[1] RAS, Inst Problems Mech, Vernadskogo Ave 101 1, Moscow 119526, Russia

[2] RAS, Inst Crystallograhy, Leninskii Ave 59, Moscow 119333, Russia

[3] Univ Tokyo, Fac Engn, Dept Elect Engn, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138655, Japan

来源：

IUTAM SYMPOSIUM ON GROWING SOLIDS, 2015 | 2017年 / 23卷

基金：

俄罗斯基础研究基金会;

关键词：

Bridgman crystal growth; Microgravity conditions; Impurities; Segregation; X-ray topography; Computer simulation; Convection; Heat transfer; Mass transfer; SEGREGATION; INTERFACE;

D O I：

10.1016/j.piutam.2017.06.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An application of X-ray topography methods allowed us to construct a two-dimensional map of the impurity distribution in a GaSb:Te crystal grown under microgravity conditions. This map served as a framework for the analysis of crystal growth features and of the impurity inhomogeneity in the crystal. The data on the impurity distribution in the sample became an experimental basis for the analysis of the crystallization parameters (the crystal growth rate and the maximum convection velocity) and an adequate application of theoretical models (analytical and numerical) to explaining the mechanisms of onset of impurity inhomogeneities in the crystal. (C) 2015 The Authors. Published by Elsevier B.V.

引用

页码：42 / 51

页数：10

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