Grain boundary dynamics of SiC bicrystals under shear deformation

被引：11

作者：

Bringuier, Stefan ^{[1
]}

Manga, Venkateswara Rao ^{[1
]}

Runge, Keith ^{[1
]}

Deymier, Pierre ^{[1
]}

Muralidharan, Krishna ^{[1
]}

机构：

[1] Univ Arizona, Dept Mat Sci & Engn, Tucson, AZ 85721 USA

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2015年 / 634卷

关键词：

Stick-slip; Athermal dislocation climb; Slide-climb; Silicon carbide; Bicrystals; MOLECULAR-DYNAMICS; SILICON-CARBIDE; MECHANICAL-BEHAVIOR; SIMULATION; ZIRCONIA; CERAMICS; FRACTURE; ALUMINA; MOTION;

D O I：

10.1016/j.msea.2015.03.022

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The dynamics of SiC grain boundaries under shear are characterized using molecular dynamics simulations. At low-temperatures, low-angle grain boundaries exhibit stick-slip behavior due to athermal climb of edge dislocations along the grain boundary. With increasing temperature stick-slip becomes less pronounced due to dislocation glide, and at high-temperatures, structural disordering of the low-angle grain boundary inhibits stick-slip. In contrast, structural disordering of the high-angle grain boundary is induced under shear even at low temperatures, resulting in a significantly dampened stick-slip behavior. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：161 / 166

页数：6

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