Improved quality of flash-lamp-crystallized polycrystalline silicon films by using low defect density Cat-CVD a-Si films

被引：2
作者：
Nozawa, Takaki [1 ]
Ohdaira, Keisuke [1 ]
机构：
[1] JAIST, Nomi, Ishikawa 9231292, Japan
来源：
INTERNATIONAL JOURNAL OF MATERIALS RESEARCH | 2017年 / 108卷 / 10期
关键词：
Flash lamp annealing; Amorphous silicon; Polycrystalline silicon; Crystallization; Defect density; HYDROGENATED AMORPHOUS-SILICON; MINORITY-CARRIER LIFETIMES; CHEMICAL-VAPOR-DEPOSITION; EXPLOSIVE CRYSTALLIZATION; SOLAR-CELLS; PERIODIC MICROSTRUCTURES; GLASS; STABILITY; PECVD;
D O I：
10.3139/146.111548
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
We investigate the influence of the quality of precursor amorphous silicon (a-Si) films on the quality of flash-lamp-crystallized (FLC) polycrystalline Si (poly-Si) films by tuning the conditions of a-Si deposition by catalytic chemical vapor deposition. Electron spin resonance measurement reveals that the defect density of FLC poly-Si films is affected by the defect density of a-Si films, and FLC poly-Si films with lower defect density can be formed by using precursor a-Si films with lower defect density. The same tendency is also confirmed through mu-PCD measurement. Improvement in the characteristics of thin-film crystalline Si (c-Si) solar cells can be expected by using highquality FLC poly-Si films formed from a-Si films with low defect density.
引用
收藏
页码：827 / 831
页数：5
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共 42 条
[21]   Polycrystalline Silicon Films with Nanometer-Sized Dense Fine Grains Formed by Flash-Lamp-Induced Crystallization [J].
Ohdaira, Keisuke ;
Ishii, Shohei ;
Tomura, Naohito ;
Matsumura, Hideki .
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (01) :591-595
[22]   Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing [J].
Ohdaira, Keisuke ;
Ishii, Shohei ;
Tomura, Naohito ;
Matsumura, Hideki .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
[23]   Polycrystalline Si films with unique microstructures formed from amorphous Si films by non-thermal equilibrium flash lamp annealing [J].
Ohdaira, Keisuke ;
Nishikawa, Takuya ;
Shiba, Kazuhiro ;
Takemoto, Hiroyuki ;
Matsumura, Hideki .
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, 2010, 7 (3-4) :604-607
[24]   Flash-lamp-crystallized polycrystalline silicon films with high hydrogen concentration formed from Cat-CVD a-Si films [J].
Ohdaira, Keisuke ;
Tomura, Naohito ;
Ishii, Shohei ;
Matsumura, Hideki .
THIN SOLID FILMS, 2011, 519 (14) :4459-4461
[25]   Variation of crystallization mechanisms in flash-lamp-irradiated amorphous silicon films [J].
Ohdaira, Keisuke ;
Nishikawa, Takuya ;
Matsumura, Hideki .
JOURNAL OF CRYSTAL GROWTH, 2010, 312 (19) :2834-2839
[26]   Drastic suppression of the optical reflection of flash-lamp-crystallized poly-Si films with spontaneously formed periodic microstructures [J].
Ohdaira, Keisuke ;
Nishikawa, Takuya ;
Shiba, Kazuhiro ;
Takemoto, Hiroyuki ;
Matsumura, Hideki .
THIN SOLID FILMS, 2010, 518 (21) :6061-6065
[27]   Flash-lamp-crystallized polycrystalline silicon films with remarkably long minority carrier lifetimes [J].
Ohdaira, Keisuke ;
Takemoto, Hiroyuki ;
Nishikawa, Takuya ;
Matsumura, Hideki .
CURRENT APPLIED PHYSICS, 2010, 10 (03) :S402-S405
[28]   Selection of Material for the Back Electrodes of Thin-Film Solar Cells Using Polycrystalline Silicon Films Formed by Flash Lamp Annealing [J].
Ohdaira, Keisuke ;
Fujiwara, Tomoko ;
Endo, Yohei ;
Shiba, Kazuhiro ;
Takemoto, Hiroyuki ;
Matsumura, Hideki .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
[29]   Explosive crystallization of amorphous silicon films by flash lamp annealing [J].
Ohdaira, Keisuke ;
Fujiwara, Tomoko ;
Endo, Yohei ;
Nishizaki, Shogo ;
Matsumura, Hideki .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (04)
[30]   Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing [J].
Ohdaira, Keisuke ;
Fujiwara, Tomoko ;
Endo, Yohei ;
Nishizaki, Shogo ;
Matsumura, Hideki .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (11) :8239-8242
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