Improved quality of flash-lamp-crystallized polycrystalline silicon films by using low defect density Cat-CVD a-Si films

被引：2
作者：
Nozawa, Takaki [1 ]
Ohdaira, Keisuke [1 ]
机构：
[1] JAIST, Nomi, Ishikawa 9231292, Japan
来源：
INTERNATIONAL JOURNAL OF MATERIALS RESEARCH | 2017年 / 108卷 / 10期
关键词：
Flash lamp annealing; Amorphous silicon; Polycrystalline silicon; Crystallization; Defect density; HYDROGENATED AMORPHOUS-SILICON; MINORITY-CARRIER LIFETIMES; CHEMICAL-VAPOR-DEPOSITION; EXPLOSIVE CRYSTALLIZATION; SOLAR-CELLS; PERIODIC MICROSTRUCTURES; GLASS; STABILITY; PECVD;
D O I：
10.3139/146.111548
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
We investigate the influence of the quality of precursor amorphous silicon (a-Si) films on the quality of flash-lamp-crystallized (FLC) polycrystalline Si (poly-Si) films by tuning the conditions of a-Si deposition by catalytic chemical vapor deposition. Electron spin resonance measurement reveals that the defect density of FLC poly-Si films is affected by the defect density of a-Si films, and FLC poly-Si films with lower defect density can be formed by using precursor a-Si films with lower defect density. The same tendency is also confirmed through mu-PCD measurement. Improvement in the characteristics of thin-film crystalline Si (c-Si) solar cells can be expected by using highquality FLC poly-Si films formed from a-Si films with low defect density.
引用
收藏
页码：827 / 831
页数：5
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