A large polarization in Ce-modified bismuth ferrite thin films

被引：16

作者：

Wang, Yuanyu ^{[1
]}

机构：

[1] Guizhou Univ, Coll Mat Sci & Met Engn, Guiyang 550003, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 12期

关键词：

FERROELECTRIC PROPERTIES; LA-SUBSTITUTION; DOPED BIFEO3; MULTIFERROICS; MECHANISM; BEHAVIOR;

D O I：

10.1063/1.3596825

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bi(0.95)Ce(0.05)FeO(3) (BCFO) thin films were grown on SrRuO(3)/TiO(2)/SiO(2)/Si(100) substrates via radio frequency sputtering. The BCFO thin film has a (111) orientation with a high phase purity. Improved dielectric behavior is observed for the BCFO thin film as compared with that of pure bismuth ferrite thin film. A large remanent polarization of 2P(r) similar to 183.9 mu C/cm(2) is induced in the BCFO thin film, owing to the (111) orientation and the introduction of Ce. The local phase decomposition induced by larger depolarization fields and the oxygen vacancies dominates the fatigue resistance of the BCFO thin film. (c) 2011 American Institute of Physics. [doi:10.1063/1.3596825]

引用

页数：4

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