Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons

被引：18

作者：

Kim, Hong-Yeol ^{[2
]}

Anderson, Travis ^{[1
]}

Mastro, Michael A. ^{[1
]}

Freitas, Jaime A., Jr. ^{[1
]}

Jang, Soohwan ^{[3
]}

Hite, Jennifer ^{[1
]}

Eddy, Charles R., Jr. ^{[1
]}

Kim, Jihyun ^{[2
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Korea Univ, Dept Chem & Biol Engn, Seoul, South Korea

[3] Dankook Univ, Dept Chem Engn, Yongin 448701, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 326卷 / 01期

关键词：

Photoluminescence; Radiation; Semiconducting Gallium Compounds; High Electron Mobility Transistor; RAMAN-SCATTERING;

D O I：

10.1016/j.jcrysgro.2011.01.052

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

An AlGaN/GaN HEMT was irradiated with 5 MeV protons at a dose up to 2 x 10(15)/cm(2). Photoluminescence spectra measured at 5 K indicated that GaN lattice was severely damaged by collisions with high energy protons although distinct near band-edge features were still observable. An I-DS-V-DS measurement showed that the current level was decreased by 43% after proton irradiation, and an I-GS-V-GS measurement suggested that damage at the metal-contact/AlGaN interface was minimal. Transistor operation was found to be resistant to proton irradiation, which was partially attributed to a self-healing mechanism in proximity to the AlGaN/GaN interface. Published by Elsevier B.V.

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收藏

页码：62 / 64

页数：3

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