Laser Produced Plasma Light Source for EUVL

被引:10
作者
Fomenkov, Igor V. [1 ]
Ershov, Alex I. [1 ]
Partlo, William N. [1 ]
Myers, David W. [1 ]
Brown, Daniel [1 ]
Sandstrom, Richard L. [1 ]
La Fontaine, Bruno [1 ]
Bykanov, Alexander N. [1 ]
Vaschenko, Georgiy O. [1 ]
Khodykin, Oleh V. [1 ]
Boewering, Norbert R. [1 ]
Das, Palash [1 ]
Fleurov, Vladimir B. [1 ]
Zhang, Kevin [1 ]
Srivastava, Shailendra N. [1 ]
Ahmad, Imtiaz [1 ]
Rajyaguru, Chirag [1 ]
De Dea, Silvia [1 ]
Hou, Richard R. [1 ]
Dunstan, Wayne J. [1 ]
Baumgart, Peter [1 ]
Ishihara, Toshi [1 ]
Simmons, Rod D. [1 ]
Jacques, Robert N. [1 ]
Bergstedt, Robert A. [1 ]
Brandt, David C. [1 ]
机构
[1] Cymer Inc, San Diego, CA 92127 USA
来源
EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY II | 2011年 / 7969卷
关键词
EUV source; EUV lithography; Laser Produced Plasma;
D O I
10.1117/12.882210
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
This paper describes the development of laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source architecture for advanced lithography applications in high volume manufacturing. EUV lithography is expected to succeed 193 nm immersion technology for sub-22 nm critical layer patterning. In this paper we discuss the most recent results from high qualification testing of sources in production. Subsystem performance will be shown including collector protection, out-of-band (OOB) radiation measurements, and intermediate-focus (IF) protection as well as experience in system use. This presentation reviews the experimental results obtained on systems with a focus on the topics most critical for an HVM source.
引用
收藏
页数:6
相关论文
共 7 条
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