Absorber and gain dynamics in dilute nitride mode-locked lasers

被引：0

作者：

Thoma, Jiri ^{[1
,2
]}

Ochalski, Tomasz ^{[1
,2
]}

Piwonski, Tomasz ^{[1
,2
]}

Hegarty, Stephen P. ^{[1
,2
]}

Huyet, Guillaume ^{[1
,2
]}

Haring, Kimmo ^{[3
]}

Puustinen, Janne ^{[3
]}

Guina, Mircea ^{[3
]}

机构：

[1] Tyndall Natl Inst, Cork, Ireland

[2] Cork Inst Technol, Cork, Ireland

[3] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS) | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a comparison between the high-speed gain and absorber dynamics of dilute nitride laser structures utilising GaAs or GaAsN barrier layers. The inclusion of dilute nitride barriers greatly reduces the absorber recovery time. The wafers were processed into two-section monolithic mode-locked lasers generating 2-5 ps pulses at 40 GHz. (C) 2010 Optical Society of America

引用

页数：2

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