Analysis of quantum levels for self-assembled InGaAsN/GaP quantum dots

被引：12
作者：
Fukami, F. [1 ]
Umeno, K. [1 ]
Furukawa, Y. [1 ]
Urakami, N. [1 ]
Mitsuyoshi, S. [1 ]
Okada, H. [1 ]
Yonezu, H. [1 ]
Wakahara, A. [1 ]
机构：
[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 | 2011年 / 8卷 / 02期
关键词：
quantum dot; dilute nitride; finite element method; electronic structure; MOLECULAR-BEAM EPITAXY; BAND-GAP; ELEMENTAL DEVICES; DISLOCATION-FREE; N CONTENT; ALLOYS; SI; SEMICONDUCTORS; PARAMETERS; SUBSTRATE;
D O I：
10.1002/pssc.201000500
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We develop the design method of luminescence device with the strained quantum dots (QDs) on Si using a theoretical analysis on realistic structure. We have calculated numerically the first electron and heavy-hole quantum levels of self-assembled InGaAsN/GaP QDs using the finite element method, the model-solid theory and the band-anticrossing model. The calculation results indicate that N incorporation into InGaAs QDs drastically reduces the conduction band minimum (similar to 120 meV/N at%), and that it is shown enough energy difference between the first electron-quantum level and GaP X-state when N composition is 1 similar to 2%. For self-assembled In0.5Ga0.5As0.99N0.01/GaP QDs, the calculated transition energy at room temperature (RT) nearly matches with the measured photoluminescence (PL) peak energy. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：322 / 324
页数：3
相关论文
共 22 条
[1]   N incorporation in GaP and band gap bowing of CaNxP1-x [J].
Bi, WG ;
Tu, CW .
APPLIED PHYSICS LETTERS, 1996, 69 (24) :3710-3712
[2]   Analysis of band anticrossing in GaNxP1-x alloys -: art. no. 085209 [J].
Buyanova, IA ;
Izadifard, M ;
Kasic, A ;
Arwin, H ;
Chen, WM ;
Xin, HP ;
Hong, YG ;
Tu, CW .
PHYSICAL REVIEW B, 2004, 70 (08) :085209-1
[3]   Band structure and optical gain of InGaAsN/GaAsP/GaAs strained quantum wells [J].
Carrère, H ;
Marie, X ;
Barrau, J ;
Amand, T .
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 8, 2005, 2 (08) :3023-3026
[4]   Control of N content of GaPN grown by molecular beam epitaxy and growth of GaPN lattice matched to Si(100) substrate [J].
Furukawa, Y ;
Yonezu, H ;
Ojima, K ;
Samonji, K ;
Fujimoto, Y ;
Momose, K ;
Aiki, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (2A) :528-532
[5]   Monolithic implementation of elemental devices for optoelectronic integrated circuit in lattice-matched Si/III-V-N alloy layers [J].
Furukawa, Yuzo ;
Yonezu, Hiroo ;
Morisaki, Yuji ;
Moon, Soo-Young ;
Ishiji, Seigi ;
Wakahara, Akihiro .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (33-36) :L920-L922
[6]   Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy [J].
Kondow, M ;
Uomi, K ;
Kitatani, T ;
Watahiki, S ;
Yazawa, Y .
JOURNAL OF CRYSTAL GROWTH, 1996, 164 (1-4) :175-179
[7]   Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers [J].
Kuo, Y. -K. ;
Yen, S. -H. ;
Yao, M. -W. ;
Tsai, M. -C. ;
Chen, M. -L. ;
Liou, B. -T. .
APPLIED PHYSICS B-LASERS AND OPTICS, 2008, 93 (2-3) :497-506
[8]   Dislocation-free and lattice-matched Si/GaP1-xNx/Si structure for photo-electronic integrated systems [J].
Momose, K ;
Yonezu, H ;
Fujimoto, Y ;
Furukawa, Y ;
Motomura, Y ;
Aiki, K .
APPLIED PHYSICS LETTERS, 2001, 79 (25) :4151-4153
[9]   Dislocation-free InxGa1-xP1-yNy/GaP1-zNz double-heterostructure light emitting diode on Si substrate [J].
Moon, SY ;
Yonezu, H ;
Furukawa, Y ;
Kim, SM ;
Morita, Y ;
Wakahara, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4A) :1752-1755
[10]   Mode assignment of excited states in self-assembled InAs/GaAs quantum dots [J].
Noda, S ;
Abe, T ;
Tamura, M .
PHYSICAL REVIEW B, 1998, 58 (11) :7181-7187
123