Theoretical simulation of mid-wave type-II InAs/GaSb superlattice interband cascade photodetector

被引：1

作者：

Hackiewicz, Klaudia ^{[1
]}

Manyk, Tetiana ^{[1
]}

Martyniuk, Piotr ^{[1
]}

Rutkowski, Jaroslaw ^{[1
]}

机构：

[1] Mil Univ Technol, Inst Appl Phys, 2 Kaliskiego Str, PL-00908 Warsaw, Poland

来源：

INFRARED SENSORS, DEVICES, AND APPLICATIONS VII | 2017年 / 10404卷

关键词：

interband cascade photodetectors; ICP; type-II superlattice; detectivity; infrared; detectors; infrared detection;

D O I：

10.1117/12.2273421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper interband cascade type-II InAs/GaSb superlattice photodetector in temperature range from 225 K to 300 K is investigated. The article concerns the theoretical simulations of the detectivity characteristics of cascade detector with equal absorber regions in each stage. The obtained theoretical characteristics are comparable to experimentally measured, assuming that transport in absorber is determined by dynamics of intrinsic carriers. The greatest fit is observed for overlap values which increase with decreasing temperature form 0.175 eV for 225 K to 0.132 eV for 300 K.

引用

页数：7

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