Electron and hole scattering dynamics in InN films investigated by infrared measurements

被引：4
作者：
Ishitani, Yoshihiro [1 ]
Fujiwara, Masayuki [1 ]
Imai, Daichi [1 ]
Kusakabe, Kazuhide [1 ]
Yoshikawa, Akihiko [1 ]
机构：
[1] Chiba Univ, Grad Sch Elect & Elect Engn, Venture Business Lab, Inage Ku, Chiba 2638522, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2012年 / 209卷 / 01期
关键词：
anisotropic carrier scattering; electron and hole dynamics; infrared spectroscopy; InN; MOBILITY;
D O I：
10.1002/pssa.201100152
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
InN layers have electron accumulation structure around the surfaces and interfaces with the substrates. Infrared (IR) spectroscopy enables the analysis of the inside bulk region in spite of the high sheet electron density of the order of 10(13) cm(-2) in the accumulation layers using the dispersion of the penetration depth. The polarization spectroscopy shows the anisotropic electron and hole scattering rates. The higher scattering rates of electron and hole plasmons vibrating along the c axis are attributed to edge-type dislocations, while the scattering by Mg or related complex dominates the damping processes of hole plasmons vibrating vertical to the c axis in highly Mg-doped p-InN. The smaller photoluminescence (PL) intensity of p-InN is attributed to the smaller activation energy of carriers to be captured by deep levels than that from the captured carriers to the ground state. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：56 / 64
页数：9
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