Growth of Single-crystalline Transition Metal Dichalcogenides Monolayers with Large-size

被引:6
|
作者
Zhou, Shengxue [1 ,2 ]
Jiao, Liying [1 ]
机构
[1] Tsinghua Univ, Dept Chem, Key Lab Organ Optoelect & Mol Engn, Minist Educ, Beijing 100084, Peoples R China
[2] Ningxia Normal Univ, Dept Chem & Chem Engn, Guyuan 756000, Peoples R China
基金
中国国家自然科学基金;
关键词
Two dimensional; Single crystal; Chemical vapor deposition; Field effect transistor; CHEMICAL-VAPOR-DEPOSITION; LARGE-AREA SYNTHESIS; FIELD-EFFECT TRANSISTORS; CHARGE-DENSITY-WAVE; HIGH-QUALITY; MOS2; TRANSISTORS; MOORES LAW; TRANSPORT; OPTOELECTRONICS; EVOLUTION;
D O I
10.1007/s40242-020-0188-x
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional(2D) transition metal dichalcogenides(TMDCs) semiconductors, such as monolayers of molybdenum disulfide(MoS2) and tungsten disulfide(WS2) can potentially serve as ultrathin channel materials for building short channel field-effect transistors(FETs) to further extend Moore's Law. It is essential to develop control-lable approaches for the synthesis of large single crystals of these 2D semiconductors to promote their practical applications in future electronics. In this short review, we summarized the recent advances on the chemical vapor deposition(CVD) of single crystalline semiconducting 2D TMDCs with a large size. We first discussed the driving force and urgent demands on developing controllable approaches for the growth of large 2D TMDCs single crystals and then summarized the current strategies and representative studies on the CVD growth of large 2D single crystals. Finally, we discussed the challenges and future directions in this topic.
引用
收藏
页码:511 / 517
页数:7
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