Using time-dependent reliability fallout as a function of yield to optimize burn-in time for a 130nm SRAM device

被引：0

作者：

Forbes, KR ^{[1
]}

Arguello, N ^{[1
]}

机构：

[1] Motorola Inc, Semicond Prod Sector, Austin, TX 78721 USA

来源：

2003 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP - FINAL REPORT | 2003年

关键词：

CMOS reliability; burn-in; defect; yield; reliability modeling; acceleration factor;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A statistical model is presented to predict the bum-in necessary to ensure a specified reliability target over the product lifetime. Parameters for this model are estimated from interval lifetest data. A relationship between yield and reliability was incorporated with thermal and voltage acceleration of time-to-failure. Parameters are fitted simultaneously using the Maximum Likelihood Estimation (MLE) methodology. ne confidence intervals necessary to assess customer risks are constructed using asymptotic theory.

引用

页码：61 / 66

页数：6

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