Power Dissipation Effects on 28nm FPGA-Based System on Chips Neutron Sensitivity

被引：0

作者：

Bruni, G. ^{[1
]}

Rech, P. ^{[2
]}

Tambara, L. ^{[2
]}

Nazar, G. L. ^{[2
]}

Kastensmidt, F. L. ^{[2
]}

Reis, R. ^{[2
]}

Paccagnella, A. ^{[1
]}

机构：

[1] Padova Univ, Dipartimento Eletron & Infonnat, DEI, Padua, Italy

[2] Univ Fed Rio Grande Do Sul, Inst Infonnat, Porto Alegre, RS, Brazil

来源：

2014 22ND INTERNATIONAL CONFERENCE ON VERY LARGE SCALE INTEGRATION (VLSI-SOC) | 2014年

关键词：

FPGA; Power Dissipation; Radiation Sensitivity; Temperature; System On Chips; INDUCED SOFT ERRORS; SRAM;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Modern System on Chips (SoCs) and embedded electronic devices work at very high frequencies, which have the countermeasure of increasing the power dissipation and, consequently, the silicon die temperature. The presented radiation experiments on a 28nm FPGA-based SoC demonstrate that the temperature variation caused by a higher operating frequency affects the FPGA configuration memory cross section. An evaluation and discussion of the observed reliability dependence on power dissipation effects on practical application is also presented.

引用

页数：6