共 52 条
Mg2+-Assisted Passivation of Defects in CsPbI3 Perovskite Nanocrystals for High-Efficiency Photoluminescence
被引:20
作者:

Chen, Qiuhong
论文数: 0 引用数: 0
h-index: 0
机构:
Guangxi Univ, Sch Phys Sci & Technol, MOE Key Lab New Proc Technol Nonferrous Met & Mat, Nanning 530004, Peoples R China
Guangxi Univ, Guangxi Key Lab Proc Nonferrous Met & Featured Ma, Nanning 530004, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, MOE Key Lab New Proc Technol Nonferrous Met & Mat, Nanning 530004, Peoples R China

Cao, Sheng
论文数: 0 引用数: 0
h-index: 0
机构:
Guangxi Univ, Sch Phys Sci & Technol, MOE Key Lab New Proc Technol Nonferrous Met & Mat, Nanning 530004, Peoples R China
Guangxi Univ, Guangxi Key Lab Proc Nonferrous Met & Featured Ma, Nanning 530004, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, MOE Key Lab New Proc Technol Nonferrous Met & Mat, Nanning 530004, Peoples R China

Xing, Ke
论文数: 0 引用数: 0
h-index: 0
机构:
Guangxi Univ, Sch Phys Sci & Technol, MOE Key Lab New Proc Technol Nonferrous Met & Mat, Nanning 530004, Peoples R China
Guangxi Univ, Guangxi Key Lab Proc Nonferrous Met & Featured Ma, Nanning 530004, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, MOE Key Lab New Proc Technol Nonferrous Met & Mat, Nanning 530004, Peoples R China

Ning, Meijing
论文数: 0 引用数: 0
h-index: 0
机构:
Guangxi Univ, Sch Phys Sci & Technol, MOE Key Lab New Proc Technol Nonferrous Met & Mat, Nanning 530004, Peoples R China
Guangxi Univ, Guangxi Key Lab Proc Nonferrous Met & Featured Ma, Nanning 530004, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, MOE Key Lab New Proc Technol Nonferrous Met & Mat, Nanning 530004, Peoples R China

Zeng, Ruosheng
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h-index: 0
机构:
Guangxi Univ, Sch Phys Sci & Technol, MOE Key Lab New Proc Technol Nonferrous Met & Mat, Nanning 530004, Peoples R China
Guangxi Univ, Guangxi Key Lab Proc Nonferrous Met & Featured Ma, Nanning 530004, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, MOE Key Lab New Proc Technol Nonferrous Met & Mat, Nanning 530004, Peoples R China

Wang, Yunjun
论文数: 0 引用数: 0
h-index: 0
机构:
Suzhou Xingshuo Nanotech Co Ltd Mesolight, Suzhou 215123, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, MOE Key Lab New Proc Technol Nonferrous Met & Mat, Nanning 530004, Peoples R China

Zhao, Jialong
论文数: 0 引用数: 0
h-index: 0
机构:
Guangxi Univ, Sch Phys Sci & Technol, MOE Key Lab New Proc Technol Nonferrous Met & Mat, Nanning 530004, Peoples R China
Guangxi Univ, Guangxi Key Lab Proc Nonferrous Met & Featured Ma, Nanning 530004, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, MOE Key Lab New Proc Technol Nonferrous Met & Mat, Nanning 530004, Peoples R China
机构:
[1] Guangxi Univ, Sch Phys Sci & Technol, MOE Key Lab New Proc Technol Nonferrous Met & Mat, Nanning 530004, Peoples R China
[2] Guangxi Univ, Guangxi Key Lab Proc Nonferrous Met & Featured Ma, Nanning 530004, Peoples R China
[3] Suzhou Xingshuo Nanotech Co Ltd Mesolight, Suzhou 215123, Peoples R China
基金:
中国国家自然科学基金;
关键词:
LIGHT-EMITTING-DIODES;
ALPHA-CSPBI3;
NANOCRYSTALS;
ANION-EXCHANGE;
PHASE;
STABILITY;
LUMINESCENT;
BR;
CL;
D O I:
10.1021/acs.jpclett.1c03258
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
CsPbI3 perovskite nanocrystals (NCs) are emerging as promising materials for optoelectronic devices because of their superior optical properties. However, the poor stability of CsPbI3 NCs has become a huge bottleneck for practical applications. Herein, we report an effective strategy of Mg2+-assisted passivation of surface defects to obtain high emission efficiency and stability in CsPbI3 NCs. It is found that the introduced Mg2+ ions are mainly distributed on the surface of NCs and then passivate the NC defects, enhancing radiative decay rate and reducing nonradiative decay rate. As a result, the as-prepared Mg2+-treated CsPbI3 (Mg-CsPbI3) NCs exhibit the highest photoluminescence quantum yield (PLQY) of 95%. The Mg-CsPbI3 NC colloidal solution retains 80% of its original PLQY after 80 days of atmosphere exposure. The red perovskite light-emitting diodes based on the Mg-CsPbI3 NCs demonstrate an external quantum efficiency of 8.4%, which shows an almost 4-fold improvement compared to the devices based on the untreated NCs.
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收藏
页码:11090 / 11097
页数:8
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