Improved Electrical and Temporal Stability of In-Zn Oxide Semiconductor Thin-Film Transistors With Organic Passivation Layer

被引:14
|
作者
Heo, Kwan-Jun [1 ]
Tarsoly, Gergely [2 ]
Lee, Jae-Yun [2 ]
Choi, Seong Gon [2 ]
Koh, Jung-Hyuk [3 ]
Kim, Sung-Jin [2 ]
机构
[1] SK Hynix, Ctr Res & Dev, Icheon 13558, South Korea
[2] Chungbuk Natl Univ, Coll Elect & Comp Engn, Cheongju 28644, South Korea
[3] Chung Ang Univ, Coll Elect & Elect Engn, Seoul 06974, South Korea
关键词
Performance evaluation; Semiconductor device measurement; Statistical distributions; Electric variables; Stability analysis; Thin film transistors; Plastics; IZO; oxides semiconductor; passivation; thin-film transistor; DEFECTS; PMMA;
D O I
10.1109/JEDS.2022.3194921
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Solution-processed In-Zn oxide (IZO) semiconductor thin-film transistors (TFTs) were fabricated with passivation layers of either poly(methyl methacrylate) (PMMA) or cyclic transparent optical polymer (CYTOP). According to the transfer curves obtained on the day of fabrication and after 200 days, the drain-source current of the IZO TFT without a passivation layer decreased by approximately 37 %. For the PMMA-passivated IZO TFT, it decreased by approximately 31 %. The current for the CYTOPpassivated IZO TFT showed significantly lower, only 7 % deterioration. Hence, the CYTOP-passivated IZO TFT exhibited improved electrical stability under long term ambient storage. This was attributed to the difference in the chemical composition of the two polymers, as CYTOP is a fluoropolymer, while PMMA is an ester group containing organic polymer. We show, passivation of the active layer with the proper organic film improves the stability of the high-performance solution-processed IZO TFTs.
引用
收藏
页码:660 / 665
页数:6
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