Thermal Noise Modeling of Nano-scale MOSFETs for Mixed-signal and RF Applications

被引：0

作者：

Chen, Chih-Hung ^{[1
,2
]}

Chen, David ^{[1
]}

Lee, Ryan ^{[1
]}

Lei, Peiming ^{[3
]}

Wan, Daniel ^{[3
]}

机构：

[1] United Microelect Corp, Adv Technol Dev Div, Hsinchu, Taiwan

[2] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada

[3] United Microelect Corp Grp, Sunnyvale, CA USA

来源：

2013 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) | 2013年

关键词：

channel thermal noise; nano-scale MOSFETs; thermal noise characterization; thermal noise modeling; low-noise technology; mixed-signal circuit; RF circuit; HIGH-FREQUENCY NOISE; DEVICE NOISE; PARAMETER DETERMINATION; CHANNEL NOISE; PERFORMANCE; TRANSPORT; IMPACT; BULK; SOI; FET;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the thermal noise in nano-scale MOSFETs - from measurement, characterization, modeling, and potential technology enhancement for future low power, mixedsignal, and radio-frequency (RF) applications. Experimental data from five CMOS technology nodes, namely 180 nm, 130 nm, 90 nm, 65 nm, and 40 nm nodes are presented and discussed.

引用

页数：8

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