Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition

被引:10
作者
Latry, Olivier [1 ]
Dherbecourt, Pascal [1 ]
Denis, Patrick [1 ]
Cuvilly, Fabien [1 ]
Kadi, Moncef [2 ]
机构
[1] Univ Rouen Normandie, GPM UMR CNRS 6634, Ave Univ,BP12, F-76801 St Etienne Du Rouvray, France
[2] Grad Sch Engn ESIGELEC, EA 4353, IRSEEM, Ave Galilee,BP 10024, F-76801 St Etienne Du Rouvray, France
关键词
Electronic-device failures; Failure analysis; Microanalysis; Reliability analysis; Thermal stress; SCHOTTKY DIODES; LIFETIME; LIMITS; MODEL;
D O I
10.1016/j.engfailanal.2017.09.010
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
Ageing tests through thermal storage at high temperature (240 degrees C) are carried out on commercial Schottky diodes in TO220 package, in "derating mode" operational conditions. The analysis revealed a failure mechanism, resulting into vaporization of the moisture present in significant quantity in the resin/sole interface. As a consequence, a degradation of the resin, freeing up space, caused the solder to spread under the chip. The X-ray analyses, acoustic microscopy SAM, optical and electron microscopy are used to describe the failure mechanism. We note that the resin package has undergone a strong degradation. Investigations show that this phenomenon is fully responsible for the degradation process taking place in derating mode use. Most components behave similarly with respect to the ageing; however, an atypical and unusual result is revealed for one component after the ageing process. Thus, the specific case is presented as a potentially decisive case for the validation of a failure analysis, so that technical solution can be formed.
引用
收藏
页码:185 / 192
页数:8
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