Low Thermal Budget Fabrication of III-V Quantum Nanostructures on Si Substrates

被引：2

作者：

Bietti, S. ^{[1
]}

Somaschini, C. ^{[1
]}

Sanguinetti, S. ^{[1
]}

Koguchi, N. ^{[1
]}

Isella, G.

Chrastina, D.

Fedorov, A.

机构：

[1] L NESS, I-20125 Milan, Italy

来源：

QUANTUM DOTS 2010 | 2010年 / 245卷

关键词：

CHEMICAL-VAPOR-DEPOSITION; GAAS;

D O I：

10.1088/1742-6596/245/1/012078

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We show the possibility to integrate high quality III-V quantum nanostructures tunable in shape and emission energy on Si-Ge Virtual Substrate. Strong photoemission is observed, also at room temperature, form two different kind of GaAs quantum nanostructures fabricated on Silicon substrate. Due to the low thermal budget of the procedure used for the fabrication of the active layer, Droplet Epitaxy is to be considered an excellent candidate for implementation of optoelectronic devices on CMOS circuits.

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页数：4

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