Photoluminescence and electroluminescence of size-controlled silicon nanocrystallites embedded in SiO2 thin films -: art. no. 046105

被引:88
作者
Jambois, O [1 ]
Rinnert, H [1 ]
Devaux, X [1 ]
Vergnat, M [1 ]
机构
[1] Univ Henri Poincare Nancy 1, INPL, CNRS, UMR,Lab Phys Mat, F-54506 Vandoeuvre Les Nancy, France
关键词
D O I
10.1063/1.2034087
中图分类号
O59 [应用物理学];
学科分类号
摘要
Silicon nanocrystallites (nc-Si) were obtained by thermal annealing treatments of SiO/SiO2 multilayers, prepared by evaporation. The nc-Si size was controlled by the SiO thickness. In this study the SiO2 thickness was maintained at 5 nm and the SiO thickness was varied from 2 to 6 nm. The film's microstructure was studied by transmission electron microscopy. A strong photoluminescence was obtained in the visible range which corresponds to the radiative recombination of electron-hole pairs in the nc-Si. The electroluminescence signal is weaker and broader than the photoluminescence one. A model taking into account SiO2 defects and nc-Si is proposed to explain the electroluminescence results. (c) 2005 American Institute of Physics.
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页数:3
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