UV-enhanced NO2 sensor using ZnO quantum dots sensitized SnO2 porous nanowires

被引：8

作者：

Jiang, Tianchen ^{[1
]}

Liu, Xin ^{[2
]}

Sun, Jianbo ^{[1
]}

机构：

[1] Harbin Normal Univ, Sch Phys & Elect Engn, Key Lab Photon & Elect Bandgap Mat, Minist Educ, Harbin 150025, Peoples R China

[2] Harbin Univ Sci & Technol, Coll Sci, Harbin 150080, Peoples R China

来源：

NANOTECHNOLOGY | 2022年 / 33卷 / 18期

关键词：

SnO2 porous nanowires; ZnO quantum dots sensitized; UV irradiation; NO2 gas sensor; HUMIDITY-SENSING PROPERTIES; GAS SENSOR; ROOM-TEMPERATURE; THIN-FILMS; OXIDE; PERFORMANCE;

D O I：

10.1088/1361-6528/ac49c1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ZnO quantum dots sensitized SnO2 porous nanowires were fabricated and designed for UV excitation gas sensor. The ZnO/SnO2 composite (SZQ1%) with the molar proportion of 1:100 exhibits excellent sensing properties to NO2 gas under UV irradiation at 40 degrees C. The limits of detection of the SZQ1% sensor is 100 ppb. The humidity stability of SZQ1% was also measured and discussed by DC reversed circuit and complex impedance curves. The gas sensing mechanism is well discussed and illustrated to the ZnO quantum dots sensitized and the increased photo-generated carriers under UV irradiation.

引用

页数：9

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