We investigate transport in locally gated graphene devices, where carriers are injected and collected along, rather than across, the gate edge. Tuning densities into the p-n regime significantly reduces resistance along the p-n interface, while resistance across the interface increases. This provides an experimental signature of snake states, which zigzag along the p-n interface and remain stable as applied perpendicular magnetic field approaches zero. Snake states appear as a peak in transverse resistance measured along the p-n interface. The generic role of snake states in disordered graphene is also discussed.
机构:
DIPC, Manuel Lardizbal 4, E-20018 San Sebastian, Spain
Basque Fdn Sci, Ikerbasque, Maria Diaz de Haro 3, Bilbao 48013, SpainDIPC, Manuel Lardizbal 4, E-20018 San Sebastian, Spain
Bercioux, Dario
De Martino, Alessandro
论文数: 0引用数: 0
h-index: 0
机构:
City Univ London, Dept Math, London EC1V 0HB, EnglandDIPC, Manuel Lardizbal 4, E-20018 San Sebastian, Spain