Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications

被引：19
作者：
Dominici, Stefano [1 ,2 ]
Wen, Hanqing [1 ]
Bertazzi, Francesco [1 ,3 ]
Goano, Michele [1 ,3 ]
Bellotti, Enrico [2 ]
机构：
[1] Politecn Torino, Dipartimento Elettron & Telecomunicaz, Corso Duca Abruzzi 24, I-10129 Turin, Italy
[2] Boston Univ, Dept Elect & Comp Engn, 8 St Marys St, Boston, MA 02215 USA
[3] Politecn Torino, IEIIT CNR, Corso Duca Abruzzi 24, I-10129 Turin, Italy
来源：
OPTICS EXPRESS | 2016年 / 24卷 / 23期
关键词：
ASSISTED AUGER RECOMBINATION; BAND-STRUCTURE; SI; SEMICONDUCTORS; TRANSITIONS; GAP;
D O I：
10.1364/OE.24.026363
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The Ge1-xSnx alloy is a promising material for optoelectronic applications. It offers a tunable wavelength in the infrared (IR) spectrum and high compatibility with complementary metal-oxide-semiconductor (CMOS) technology. However, difficulties in growing device quality Ge1-xSnx films has left the potentiality of this material unexplored. Recent advances in technological processes have renewed the interest toward this material paving the way to potential applications. In this work, we perform a numerical investigation on absorption coefficient, radiative recombination rate, and Auger recombination properties of intrinsic and doped Ge1-xSnx for application in the extended-short wavelength infrared and medium wavelength infrared spectrum ranges. We apply a Green's function based model to the Ge1-xSnx full electronic band structure determined through an empirical pseudopotential method and determine the dominant recombination mechanism between radiative and Auger processes over a wide range of injection levels. (C) 2016 Optical Society of America
引用
收藏
页码：26363 / 26381
页数：19
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