Analysis and Reduction of Voltage Noise of Multi-layer 3D IC with PEEC-based PDN and Frequency-dependent TSV models

被引:0
作者
Kim, Seungwon [1 ]
Han, Ki Jin [1 ]
Kang, Seokhyeong [2 ]
Kim, Youngmin [1 ]
机构
[1] UNIST, Sch Elect & Comp Engn, Unist Gil 50, Ulsan 689798, South Korea
[2] UCSD, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
来源
2014 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC) | 2014年
关键词
component; voltage noise; IR drop; 3D IC; TSV; power delivery network (PDN); PEEC; S-parameter;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Three dimensional (3D) integrated circuit (IC) technology has been proposed and used to reduce the delay among layers by shortening interconnection with TSVs. However, large power and ground TSV structures generate voltage noise and cause additional IR-drop in power delivery network (PDN). In this work, we investigate and analyze the voltage noise in multiple layers 3D IC stacking with PEEC-based on-chip PDN and frequency-dependent TSV models. Then we propose multi-paired on-chip PDN structure for reducing voltage noise in a 3D IC. Our proposed PDN architecture can achieve approximately maximum 19% IR-drop reduction. In addition, layer dependency of 3D IC between the conventional and the proposed PDN models is analyzed.
引用
收藏
页码:124 / 125
页数:2
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