Using hard X-ray photoelectron spectroscopy to study a SiO2/HfO2-based interface dipole modulation stack embedded in a metal-insulator-metal structure

被引：7

作者：

Kirihara, Yoshiharu ^{[1
]}

Tsujiguchi, Ryota ^{[1
]}

Ito, Shunichi ^{[1
]}

Yasui, Akira ^{[2
]}

Miyata, Noriyuki ^{[3
]}

Nohira, Hiroshi ^{[1
]}

机构：

[1] Tokyo City Univ, Setagaya Ku, Tokyo 1588557, Japan

[2] Japan Synchrotron Radiat Res Inst JASRI, Sayo, Hyogo 6795198, Japan

[3] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS EXPRESS | 2022年 / 15卷 / 11期

关键词：

hard X-ray photoelectron spectroscopy; metal-insulator-metal structure; interface dipole modulation; change in the chemical bonding state of Ti;

D O I：

10.35848/1882-0786/ac9ae6

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hard X-ray photoelectron spectroscopy was used to examine the interface dipole modulation of SiO2/1-monolayer titanium oxide/HfO2 stack embedded in a metal-insulator-metal structure. Reversible shifts in the Si 1 s, Hf 3d, and Ti 1 s photoelectron peaks were induced by electrical stress, and they indicate the switching of the potential profile inside the SiO2/titanium oxide/HfO2 stack. Moreover, a proportion change in the Ti3+ component correlates with the potential switching, and that correlation suggests that the structural change around the interface titanium atoms leads to the interface dipole modulation.

引用

页数：5

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