Growth mechanism and surface atomic structure of AgInSe2

被引：7

作者：

Martin, Pamela Pena ^{[1
]}

Rockett, Angus A. ^{[1
]}

Lyding, Joseph ^{[2
,3
]}

机构：

[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[3] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2012年 / 30卷 / 04期

关键词：

SCANNING-TUNNELING-MICROSCOPY; CUINSE2; POLYCRYSTALLINE;

D O I：

10.1116/1.4728160

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The growth of (112) A-oriented AgInSe2 on GaAs (111) A and its surface reconstruction were studied by scanning tunneling microscopy, atomic force microscopy, and other techniques. Films were grown by a sputtering and evaporation method. Topographic STM images reveal that the film grew by atomic incorporation into surface steps resulting from screw dislocations on the surface. The screw dislocation density was similar to 10(10) cm(2). Atomically resolved images also show that the surface atomic arrangement appears to be similar to that of the bulk, with a spacing of 0.35-0.41nm. There is no observable reconstruction, which is unexpected for a polar semiconductor surface. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4728160]

引用

页数：5

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