Synchrotron radiation photoemission study of Ge/ZnS(111) heterojunction

被引：1

作者：

Ban, DY ^{[1
]}

Yang, FY ^{[1
]}

Fang, RC ^{[1
]}

Xu, SH ^{[1
]}

Xu, PS ^{[1
]}

机构：

[1] NATL SYNCHROTRON RADIAT LAB,HEFEI 230026,PEOPLES R CHINA

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1996年 / 80卷

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/0368-2048(96)02955-6

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The band lineup at the Ge/ZnS(111) interface has been studied by synchrotron radiation photoemission spectroscopy. The experimental results indicate that the deposition of Ge films by evaporation is a two-dimensional growth at the initial stage. With the growing of Ge overlayer, surface S atoms diffuse into Ge overlayer and react with Ge atoms at the interface. We derive the valence band offsets of 1.94 +/- 0.1 eV and 2.23 +/- 0.1 eV for Ge/ZnS heterojunctions grown at 200 degrees C and room temperature, respectively. The results are in good agreement with theoretical predictions.

引用

页码：197 / 200

页数：4

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