Design and fabrication of an ECG amplifier on silicon using standard CMOS process

被引：5

作者：

Rowlands, D ^{[1
]}

James, DA ^{[1
]}

Vanegas, C ^{[1
]}

Rao, S ^{[1
]}

Lisner, P ^{[1
]}

机构：

[1] Griffith Univ, Brisbane, Qld 4111, Australia

来源：

PROCEEDINGS OF THE IEEE SENSORS 2003, VOLS 1 AND 2 | 2003年

关键词：

ECG; VLSI; CMOS;

D O I：

10.1109/ICSENS.2003.1279167

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ECG is a vital part in the armory of the fight against heart disease. In this work we have designed and implemented a 6 lead ECG acquisition system on silicon. The total circuit consisting of instrumentation amplifiers and filters were placed them onto a silicon die 870mum by 500mum. The circuit shows good noise immunity, very high CMRR, and a good frequency response. The output of the circuit is a 0 to 4 volt signal for lead I and lead II. The advantage of this system is the use of the standard CMOS process which will reduce the complexity and cost of manufacture.

引用

页码：1348 / 1352

页数：5