An Ultra-Low-Power Transformer-Feedback 60 GHz Low-Noise Amplifier in 90 nm CMOS

被引：42

作者：

Chang, Po-Yu ^{[1
,2
]}

Su, Sy-Haur ^{[1
,2
]}

Hsu, Shawn S. H. ^{[1
,2
]}

Cho, Wei-Han ^{[1
,2
]}

Jin, Jun-De ^{[1
,2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2012年 / 22卷 / 04期

关键词：

CMOS; low-noise amplifier (LNA); mm-wave; transformer-feedback; DESIGN; LNA;

D O I：

10.1109/LMWC.2012.2187883

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ultra-low-power 60 GHz low-noise amplifier (LNA) with a 12.5 dB peak gain and a 5.4 dB minimum NF is demonstrated in a 90 nm CMOS technology. The LNA is composed of four cascaded common-source stages with the gate-source transformer feedback applied to the input stage for simultaneous noise and input matching. Also, the drain-source transformer feedback is used in the following stages for gain enhancement and interstage/output matching. This LNA consumes only 4.4 mW from a 1 V supply with a compact core area of 0.047 mm(2).

引用

页码：197 / 199

页数：3

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