An Ultra-Low-Power Transformer-Feedback 60 GHz Low-Noise Amplifier in 90 nm CMOS

被引：41
|
作者：
Chang, Po-Yu [1 ,2 ]
Su, Sy-Haur [1 ,2 ]
Hsu, Shawn S. H. [1 ,2 ]
Cho, Wei-Han [1 ,2 ]
Jin, Jun-De [1 ,2 ]
机构：
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2012年 / 22卷 / 04期
关键词：
CMOS; low-noise amplifier (LNA); mm-wave; transformer-feedback; DESIGN; LNA;
D O I：
10.1109/LMWC.2012.2187883
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An ultra-low-power 60 GHz low-noise amplifier (LNA) with a 12.5 dB peak gain and a 5.4 dB minimum NF is demonstrated in a 90 nm CMOS technology. The LNA is composed of four cascaded common-source stages with the gate-source transformer feedback applied to the input stage for simultaneous noise and input matching. Also, the drain-source transformer feedback is used in the following stages for gain enhancement and interstage/output matching. This LNA consumes only 4.4 mW from a 1 V supply with a compact core area of 0.047 mm(2).
引用
收藏
页码：197 / 199
页数：3
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