Analysis of indium incorporation in non-and semipolar GaInN QW structures: comparing x-ray diffraction and optical properties

被引：18

作者：

Joenen, H. ^{[1
]}

Bremers, H. ^{[1
]}

Rossow, U. ^{[1
]}

Langer, T. ^{[1
]}

Kruse, A. ^{[1
]}

Hoffmann, L. ^{[1
]}

Thalmair, J. ^{[2
]}

Zweck, J. ^{[2
]}

Schwaiger, S. ^{[3
]}

Scholz, F. ^{[3
]}

Hangleiter, A. ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Appl Phys, D-38106 Braunschweig, Germany

[2] Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, Germany

[3] Univ Ulm, Inst Optoelect, D-89081 Ulm, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2012年 / 27卷 / 02期

关键词：

LIGHT-EMITTING-DIODES; QUANTUM-WELLS; PLANE GAN; SEMICONDUCTORS; FIELDS; POLARIZATION; LIFETIME; ALLOYS; LAYERS; INGAN;

D O I：

10.1088/0268-1242/27/2/024013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the growth of GaInN/GaN quantum wells on various polar, nonpolar and semipolar planes. From a detailed x-ray diffraction analysis, we derive the strain state and the composition of the quantum wells. The optical emission energy is obtained from photoluminescence spectra and modelled taking into account the deformation potentials and the Stark shifts. Both x-ray and optical data consistently show that indium incorporation is identical on the polar, nonpolar and semipolar planes within the experimental uncertainty.

引用

页数：8

共 32 条

[31] Role of strain in polarization switching in semipolar InGaN/GaN quantum wells [J].

Yan, Qimin ;

Rinke, Patrick ;

Scheffler, Matthias ;

Van de Walle, Chris G. .

APPLIED PHYSICS LETTERS, 2010, 97 (18)

[32] Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN [J].

Yan, Qimin ;

Rinke, Patrick ;

Scheffler, Matthias ;

Van de Walle, Chris G. .

APPLIED PHYSICS LETTERS, 2009, 95 (12)

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