Analysis of indium incorporation in non-and semipolar GaInN QW structures: comparing x-ray diffraction and optical properties

被引：18

作者：

Joenen, H. ^{[1
]}

Bremers, H. ^{[1
]}

Rossow, U. ^{[1
]}

Langer, T. ^{[1
]}

Kruse, A. ^{[1
]}

Hoffmann, L. ^{[1
]}

Thalmair, J. ^{[2
]}

Zweck, J. ^{[2
]}

Schwaiger, S. ^{[3
]}

Scholz, F. ^{[3
]}

Hangleiter, A. ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Appl Phys, D-38106 Braunschweig, Germany

[2] Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, Germany

[3] Univ Ulm, Inst Optoelect, D-89081 Ulm, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2012年 / 27卷 / 02期

关键词：

LIGHT-EMITTING-DIODES; QUANTUM-WELLS; PLANE GAN; SEMICONDUCTORS; FIELDS; POLARIZATION; LIFETIME; ALLOYS; LAYERS; INGAN;

D O I：

10.1088/0268-1242/27/2/024013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the growth of GaInN/GaN quantum wells on various polar, nonpolar and semipolar planes. From a detailed x-ray diffraction analysis, we derive the strain state and the composition of the quantum wells. The optical emission energy is obtained from photoluminescence spectra and modelled taking into account the deformation potentials and the Stark shifts. Both x-ray and optical data consistently show that indium incorporation is identical on the polar, nonpolar and semipolar planes within the experimental uncertainty.

引用

页数：8

共 32 条

[1] X-ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures [J].

Bremers, H. ;

Schwiegel, A. ;

Hoffmann, L. ;

Joenen, H. ;

Rossow, U. ;

Thalmair, J. ;

Zweck, J. ;

Hangleiter, A. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (03) :616-621

[2] Properties of nonpolar a-plane InGaN/GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN [J].

Chakraborty, A ;

Keller, S ;

Meier, C ;

Haskell, BA ;

Keller, S ;

Waltereit, P ;

DenBaars, SP ;

Nakamura, S ;

Speck, JS ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3

[3] Calculations for the band lineup of strained InxGa1-xN/GaN quantum wells: Effects of strain on the band offsets [J].

Das, Tapas ;

Kabi, Sanjib ;

Biswas, Dipankar .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (04)

[4] Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity [J].

Durnev, M. V. ;

Omelchenko, A. V. ;

Yakovlev, E. V. ;

Evstratov, I. Yu ;

Karpov, S. Yu .

APPLIED PHYSICS LETTERS, 2010, 97 (05)

[5] Bowing of the band gap pressure coefficient in InxGa1-xN alloys [J].

Franssen, G. ;

Gorczyca, I. ;

Suski, T. ;

Kaminska, A. ;

Pereiro, J. ;

Munoz, E. ;

Iliopoulos, E. ;

Georgakilas, A. ;

Che, S. B. ;

Ishitani, Y. ;

Yoshikawa, A. ;

Christensen, N. E. ;

Svane, A. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (03)

[6] Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates [J].

Funato, Mitsuru ;

Ueda, Masaya ;

Kawakami, Yoichi ;

Narukawa, Yukio ;

Kosugi, Takao ;

Takahashi, Masayoshi ;

Mukai, Takashi .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (24-28) :L659-L662

[7] Polarization fields in wurtzite strained layers grown on (hkl) planes [J].

Gil, Bernard ;

Bigenwald, Pierre ;

Briota, Olivier .

SUPERLATTICES AND MICROSTRUCTURES, 2008, 44 (03) :291-301

[8] Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate [J].

Hwang, Sung-Min ;

Seo, Yong Gon ;

Baik, Kwang Hyeon ;

Cho, In-Sung ;

Baek, Jong Hyeob ;

Jung, Sukkoo ;

Kim, Tae Geun ;

Cho, Meoungwhan .

APPLIED PHYSICS LETTERS, 2009, 95 (07)

[9] Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells [J].

Im, JS ;

Kollmer, H ;

Off, J ;

Sohmer, A ;

Scholz, F ;

Hangleiter, A .

PHYSICAL REVIEW B, 1998, 57 (16) :R9435-R9438

[10] Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN [J].

Im, JS ;

Moritz, A ;

Steuber, F ;

Harle, V ;

Scholz, F ;

Hangleiter, A .

APPLIED PHYSICS LETTERS, 1997, 70 (05) :631-633

← 1 2 3 4 →