Gallium Nitride-on-Silicon Micromechanical Overtone Resonators and Filters

被引：0

作者：

Ansari, Azadeh ^{[1
]}

Gokhale, Vikrant J. ^{[1
]}

Thakar, Vikram A. ^{[1
]}

Roberts, John ^{[2
]}

Rais-Zadeh, Mina ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[2] Nitronex Corp, Durham, NC 27703 USA

来源：

2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2011年

基金：

美国国家科学基金会;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, for the first time, we report on high-performance GaN-on-silicon micromechanical resonators and filters. A GaN-on-silicon resonator is reported which exhibits a quality factor of 1850 at 802.5 MHz, resulting in an fxQ value twice the highest reported for GaN-based resonators to date. The effective coupling coefficient for the GaN resonator is extracted to be 1.7%, which is among the best reported in the literature.

引用

页数：4

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