SiC MOSFET switching characteristic optimization and application in battery charging/discharging

被引：0
|
作者：
Peng, Chen [1 ]
Xiao, Guochun [1 ]
Zhang, Shuai [1 ]
He, Chun [1 ]
Zhai, Zhihao [1 ]
Wang, Xinwei [1 ]
Wang, Qilei [1 ]
Du, Xudong [1 ]
机构：
[1] Xi An Jiao Tong Univ, Coll Elect Engn, Xian, Peoples R China
来源：
2019 IEEE 10TH INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS FOR DISTRIBUTED GENERATION SYSTEMS (PEDG 2019) | 2019年
基金：
中国国家自然科学基金;
关键词：
SiC MOSFET; gate parameters; oscillation; battery charging/discharging;
D O I：
10.1109/pedg.2019.8807563
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This Based on application in battery charging/discharging, instead of Si IGBT, SiC MOSFET with lower switching loss, faster switching frequency and higher operating temperature is chosen to design. In this paper, to deal with the voltage and current oscillation problem in fast switching process, the circuit model of switching on/off process is established based on a half-bridge SiC MOSFET respectively. The influence of different gate parameters on the switching characteristics is analyzed. To applicate in battery charging/discharging system, the current ripple problem has to be studied based on the optimal gate parameter. Experimental results prove the correctness of the circuit model and can provide theoretical support for SiC MOSFET's applications in battery charging/discharging system.
引用
收藏
页码：13 / 18
页数：6
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