From Crystalline Germanium-Silicon Axial Heterostructures to Silicon Nanowire-Nanotubes

被引:24
|
作者
Ben-Ishai, Moshit [1 ]
Patolsky, Fernando [1 ]
机构
[1] Tel Aviv Univ, Raymond & Beverly Sackler Fac Exact Sci, Sch Chem, IL-69978 Tel Aviv, Israel
关键词
Nanowire; nanotube; heterostructures; silicon; germanium; electrical devices; CARBON NANOTUBES; GROWTH; HETEROJUNCTIONS; CHEMISTRY; PHOTONICS; DIMENSION; SI;
D O I
10.1021/nl204263k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
One-dimensional (ID) nanostructures have attracted considerable attention as a result of their exceptional properties and potential applications. Among them, 1D axial heterostructures with well-defined and controlled heterojunctions between different nanomaterials or between different 1D nanostructures (i.e., nanowire-nanotube heterojunctions) have recently become of particular interest as potential building blocks in future high-performance nano-optoelectronic and nanoelectronic devices. Here, we report on the preparation and characterization of crystalline silicon nanowire-nanotube (SiNW-NT) heterostructures with controlled geometry, kinked and unkinked, and composition using germanium silicon nanowire heterostructures with abrupt heterojunctions (similar to 2 nm wide) as a template via the VLS-CVD mechanism.
引用
收藏
页码:1121 / 1128
页数:8
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