From Crystalline Germanium-Silicon Axial Heterostructures to Silicon Nanowire-Nanotubes

被引:24
作者
Ben-Ishai, Moshit [1 ]
Patolsky, Fernando [1 ]
机构
[1] Tel Aviv Univ, Raymond & Beverly Sackler Fac Exact Sci, Sch Chem, IL-69978 Tel Aviv, Israel
关键词
Nanowire; nanotube; heterostructures; silicon; germanium; electrical devices; CARBON NANOTUBES; GROWTH; HETEROJUNCTIONS; CHEMISTRY; PHOTONICS; DIMENSION; SI;
D O I
10.1021/nl204263k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
One-dimensional (ID) nanostructures have attracted considerable attention as a result of their exceptional properties and potential applications. Among them, 1D axial heterostructures with well-defined and controlled heterojunctions between different nanomaterials or between different 1D nanostructures (i.e., nanowire-nanotube heterojunctions) have recently become of particular interest as potential building blocks in future high-performance nano-optoelectronic and nanoelectronic devices. Here, we report on the preparation and characterization of crystalline silicon nanowire-nanotube (SiNW-NT) heterostructures with controlled geometry, kinked and unkinked, and composition using germanium silicon nanowire heterostructures with abrupt heterojunctions (similar to 2 nm wide) as a template via the VLS-CVD mechanism.
引用
收藏
页码:1121 / 1128
页数:8
相关论文
共 41 条
[1]  
[Anonymous], 1972, Heterojunctions and Metal Semiconductor Junctions
[2]   Carbon-nanotube photonics and optoelectronics [J].
Avouris, Phaedon ;
Freitag, Marcus ;
Perebeinos, Vasili .
NATURE PHOTONICS, 2008, 2 (06) :341-350
[3]   Metallic single-walled silicon nanotubes [J].
Bai, J ;
Zeng, XC ;
Tanaka, H ;
Zeng, JY .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2004, 101 (09) :2664-2668
[4]   Novel electrical switching behaviour and logic in carbon nanotube Y-junctions [J].
Bandaru, PR ;
Daraio, C ;
Jin, S ;
Rao, AM .
NATURE MATERIALS, 2005, 4 (09) :663-666
[5]   Tube-in-Tube and Wire-in-Tube Nano Building Blocks: Towards the Realization of Multifunctional Nanoelectronic Devices [J].
Ben Ishai, Moshit ;
Patolsky, Fernando .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2009, 48 (46) :8699-8702
[6]   Shape- and Dimension-Controlled Single-Crystalline Silicon and SiGe Nanotubes: Toward Nanofluidic FET Devices [J].
Ben Ishai, Moshit ;
Patolsky, Fernando .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2009, 131 (10) :3679-3689
[7]   A Route to High-Quality Crystalline Coaxial Core/Multishell Ge@Si(GeSi)n and Si@(GeSi)n Nanowire Heterostructures [J].
Ben-Ishai, Moshit ;
Patolsky, Fernando .
ADVANCED MATERIALS, 2010, 22 (08) :902-+
[8]   Magnetic manipulation of copper-tin nanowires capped with nickel ends [J].
Bentley, AK ;
Trethewey, JS ;
Ellis, AB ;
Crone, WC .
NANO LETTERS, 2004, 4 (03) :487-490
[9]   Few-electron quantum dots in nanowires [J].
Bjork, MT ;
Thelander, C ;
Hansen, AE ;
Jensen, LE ;
Larsson, MW ;
Wallenberg, LR ;
Samuelson, L .
NANO LETTERS, 2004, 4 (09) :1621-1625
[10]   Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry [J].
Boosalis, A. ;
Hofmann, T. ;
Sik, J. ;
Schubert, M. .
THIN SOLID FILMS, 2011, 519 (09) :2604-2607