The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer

被引：2

作者：

Aleshkin, V. Ya. ^{[1
,2
]}

Dikareva, N. V. ^{[3
]}

Dubinov, A. A. ^{[1
,2
]}

Zvonkov, B. N. ^{[3
]}

Kudryavtsev, K. E. ^{[1
,2
]}

Nekorkin, S. M. ^{[3
]}

Novikov, A. V. ^{[1
,2
]}

Yunin, P. A. ^{[1
,2
]}

Yurasov, D. V. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[2] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia

[3] Lobachevsky State Univ Nizhny Novgorod, Physicotech Res, Nizhnii Novgorod 603950, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2015年 / 41卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

SEMICONDUCTOR-LASERS;

D O I：

10.1134/S1063785015070020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The waveguide effect of InGaAs quantum wells in a GaAs structure grown on a Si substrate with a relaxed Ge buffer layer has been studied. After an excitation power density of 35 kW/cm(2) was reached at liquid-nitrogen temperature, several stimulated emission lines were observed in the energy range of 1350-1360 meV.

引用

页码：648 / 650

页数：3

共 8 条

[1] Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs
Aleshkin, V. Ya.
Afonenko, A. A.
Dikareva, N. V.
Dubinov, A. A.
Kudryavtsev, K. E.
Morozov, S. V.
Nekorkin, S. M.
[J]. SEMICONDUCTORS, 2013, 47 (11) : 1475 - 1477
[2] Guiding effect of quantum wells in semiconductor lasers
Aleshkin, V. Ya.
Dikareva, N. V.
Dubinov, A. A.
Zvonkov, B. N.
Karzanova, M. V.
Kudryavtsev, K. E.
Nekorkin, S. M.
Yablonskiy, A. N.
[J]. QUANTUM ELECTRONICS, 2013, 43 (05) : 401 - 406
[3] GaAs epitaxy on Si substrates: modern status of research and engineering
Bolkhovityanov, Yu B.
Pchelyakov, O. P.
[J]. PHYSICS-USPEKHI, 2008, 51 (05) : 437 - 456
[4] Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si
Colace, L
Masini, G
Galluzzi, F
Assanto, G
Capellini, G
Di Gaspare, L
Palange, E
Evangelisti, F
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (24) : 3175 - 3177
[5] High-quality Ge epilayers on Si with low threading-dislocation densities
Luan, HC
Lim, DR
Lee, KK
Chen, KM
Sandland, JG
Wada, K
Kimerling, LC
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (19) : 2909 - 2911
[6] Semiconductor InGaAs/GaAs injection lasers with waveguides based on a single quantum well
Slipchenko, S. O.
Podoskin, A. A.
Pikhtin, N. A.
Leshko, A. Yu
Rozhkov, A. V.
Tarasov, I. S.
[J]. TECHNICAL PHYSICS LETTERS, 2013, 39 (04) : 364 - 366
[7] High-Order Diffraction Gratings for High-Power Semiconductor Lasers
Vasil'eva, V. V.
Vinokurov, D. A.
Zolotarev, V. V.
Leshko, A. Yu.
Petrunov, A. N.
Pikhtin, N. A.
Rastegaeva, M. G.
Sokolova, Z. N.
Shashkin, I. S.
Tarasov, I. S.
[J]. SEMICONDUCTORS, 2012, 46 (02) : 241 - 246
[8] Semiconductor lasers with internal wavelength selection
Zolotarev, V. V.
Leshko, A. Yu.
Lyutetskii, A. V.
Nikolaev, D. N.
Pikhtin, N. A.
Podoskin, A. A.
Slipchenko, S. O.
Sokolova, Z. N.
Shamakhov, V. V.
Arsent'ev, I. N.
Vavilova, L. S.
Bakhvalov, K. V.
Tarasov, I. S.
[J]. SEMICONDUCTORS, 2013, 47 (01) : 122 - 126

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