Unconventional out-of-plane domain inversion via in-plane ionic migration in a van der Waals ferroelectric

被引:42
|
作者
Xu, Dong-Dong [1 ,2 ]
Ma, Ru-Ru [1 ,2 ]
Zhao, Yi-Feng [1 ,2 ]
Guan, Zhao [1 ,2 ]
Zhong, Qi-Lan [1 ,2 ]
Huang, Rong [1 ,2 ]
Xiang, Ping-Hua [1 ,2 ,3 ]
Zhong, Ni [1 ,2 ,3 ]
Duan, Chun-Gang [1 ,2 ,3 ]
机构
[1] East China Normal Univ, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China
[2] East China Normal Univ, Dept Elect, Shanghai 200241, Peoples R China
[3] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
FERRIELECTRIC-PARAELECTRIC TRANSITION; PHASE-TRANSITIONS; CONDUCTIVITY; POLARIZATION;
D O I
10.1039/d0tc01620a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two-dimensional ferroelectrics have gained attention because of their unique ferroelectric properties, e.g., giant negative electrostriction, odd/even layer effect, intercorrelation of in-plane and out-of-plane ferroelectricity, ferroelectric metal nature or tunable quadruple-well ferroelectric property. Here, the interplay between ionic kinetics and ferroelectric switching properties is reported in a model system, CuInP2S6, one of the few van der Waals room-temperature ferroelectric crystals. An unconventional out-of-plane domain inversion phenomenon induced by an in-plane electric field has been observed and clarified experimentally. The intralayer hopping motions of Cu-ions can play a role as media of ferroelectric domain inversion. These findings not only provide direct evidence for the microscopic origin of ferroelectric polarization in CuInP2S6, but also establish a new mechanism to reverse ferroelectric dipoles simply and effectively, offering opportunities for both fundamental studies and new device applications in information and energy storage.
引用
收藏
页码:6966 / 6971
页数:6
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