MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 Ω . mm

被引：113

作者：

Guo, Jia ^{[1
]}

Li, Guowang ^{[1
]}

Faria, Faiza ^{[1
]}

Cao, Yu ^{[1
]}

Wang, Ronghua ^{[1
]}

Verma, Jai ^{[1
]}

Gao, Xiang ^{[2
]}

Guo, Shiping ^{[2
]}

Beam, Edward ^{[3
]}

Ketterson, Andrew ^{[3
]}

Schuette, Michael ^{[3
]}

Saunier, Paul ^{[3
]}

Wistey, Mark ^{[1
]}

Jena, Debdeep ^{[1
]}

Xing, Huili ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[2] IQE RF LLC, Somerset, NJ 08873 USA

[3] TriQuint Semicond Inc, Richardson, TX 75080 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 04期

关键词：

AlN; contact resistance; GaN; high-electron-mobility transistor (HEMT); InAlN; metal-organic chemical vapor deposition (MOCVD); molecular beam epitaxy (MBE); regrowth; transistor; CONTACTS; DENSITY; GAN;

D O I：

10.1109/LED.2012.2186116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nonalloyed ohmic contacts regrown by molecular beam epitaxy were made on InAlN/AlN/GaN/SiC high-electron-mobility transistors ( HEMTs). Transmission-line-method measurements were carried out from 4 K to 350 K. Although the total contact resistance is dominated by the metal/n(+)-GaN resistance (similar to 0.16 Omega . mm), the resistance induced by the interface between the regrown n(+) GaN and HEMT channel is found to be 0.05-0.075 Omega . mm over the entire temperature window, indicating a minimal barrier for electron flow at the as-regrown interface. The quantum contact resistance theory suggests that the interface resistance can be further reduced to be < 0.02 Omega . mm in GaN HEMTs.

引用

页码：525 / 527

页数：3

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