MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 Ω . mm

被引：112

作者：

Guo, Jia ^{[1
]}

Li, Guowang ^{[1
]}

Faria, Faiza ^{[1
]}

Cao, Yu ^{[1
]}

Wang, Ronghua ^{[1
]}

Verma, Jai ^{[1
]}

Gao, Xiang ^{[2
]}

Guo, Shiping ^{[2
]}

Beam, Edward ^{[3
]}

Ketterson, Andrew ^{[3
]}

Schuette, Michael ^{[3
]}

Saunier, Paul ^{[3
]}

Wistey, Mark ^{[1
]}

Jena, Debdeep ^{[1
]}

Xing, Huili ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[2] IQE RF LLC, Somerset, NJ 08873 USA

[3] TriQuint Semicond Inc, Richardson, TX 75080 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 04期

关键词：

AlN; contact resistance; GaN; high-electron-mobility transistor (HEMT); InAlN; metal-organic chemical vapor deposition (MOCVD); molecular beam epitaxy (MBE); regrowth; transistor; CONTACTS; DENSITY; GAN;

D O I：

10.1109/LED.2012.2186116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nonalloyed ohmic contacts regrown by molecular beam epitaxy were made on InAlN/AlN/GaN/SiC high-electron-mobility transistors ( HEMTs). Transmission-line-method measurements were carried out from 4 K to 350 K. Although the total contact resistance is dominated by the metal/n(+)-GaN resistance (similar to 0.16 Omega . mm), the resistance induced by the interface between the regrown n(+) GaN and HEMT channel is found to be 0.05-0.075 Omega . mm over the entire temperature window, indicating a minimal barrier for electron flow at the as-regrown interface. The quantum contact resistance theory suggests that the interface resistance can be further reduced to be < 0.02 Omega . mm in GaN HEMTs.

引用

页码：525 / 527

页数：3

共 19 条

[1] Very low sheet resistance and Shubnikov-de-Haas oscillations in two-dimensional electron gases at ultrathin binary AlN/GaN heterojunctions
Cao, Yu
Wang, Kejia
Orlov, Alexei
Xing, Huili
Jena, Debdeep
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (15)
[2] Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth
Dasgupta, Sansaptak
Nidhi
Brown, David F.
Wu, Feng
Keller, Stacia
Speck, James S.
Mishra, Umesh K.
[J]. APPLIED PHYSICS LETTERS, 2010, 96 (14)
[3] The silicon MOSFET from a transmission viewpoint
Datta, S
Assad, F
Lundstrom, MS
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1998, 23 (3-4) : 771 - 780
[4] Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy
Guo, Jia
Cao, Yu
Lian, Chuanxin
Zimmermann, Tom
Li, Guowang
Verma, Jai
Gao, Xiang
Guo, Shiping
Saunier, Paul
Wistey, Mark
Jena, Debdeep
Xing, Huili
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (07): : 1617 - 1619
[5] Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN
Heikman, S
Keller, S
DenBaars, SP
Mishra, UK
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (19) : 2876 - 2878
[6] Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2Sx-treated n-type GaN
Lee, CT
Lin, YJ
Liu, DS
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (16) : 2573 - 2575
[7] Surface potential measurements on Ni-(Al)GaN lateral Schottky junction using scanning Kelvin probe microscopy
Lian, C
Xing, HL
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (02) : 1 - 3
[8] GaN-Based RF power devices and amplifiers
Mishra, Umesh K.
Shen, Likun
Kazior, Thomas E.
Wu, Yi-Feng
[J]. PROCEEDINGS OF THE IEEE, 2008, 96 (02) : 287 - 305
[9] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS
PADOVANI, FA
STRATTON, R
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 695 - &
[10] High-performance submicrometer gatelength GaInAs/InP composite channel HEMT's with regrown ohmic contacts
Shealy, JB
Matloubian, M
Liu, TY
Thompson, MA
Hashemi, MM
Denbaars, SP
Mishra, UK
[J]. IEEE ELECTRON DEVICE LETTERS, 1996, 17 (11) : 540 - 542

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