High-performance 980-nm strained-layer InGaAs/GaAs quantum-well lasers

被引：0

作者：

Bugajski, M ^{[1
]}

Reginski, K ^{[1
]}

Mroziewicz, B ^{[1
]}

Kubica, JM ^{[1
]}

Sajewicz, P ^{[1
]}

Piwonski, T ^{[1
]}

Zbroszczyk, M ^{[1
]}

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

来源：

OPTICA APPLICATA | 2001年 / 31卷 / 02期

关键词：

Drift diffusion equation - Gallium arsenide substrate - Threshold current density;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The paper reports fabrication of strained-layer InGaAs/GaAs separate-confinement -heterostructure single-quantum-well (SCH SQW) lasers operating in the wavelength range of 980 nm. Design process of the devices involved simulation of their above-threshold operation including all relevant physical phenomena. The lasers were characterized at room temperature in the pulsed operation regime at frequency nu = 5 kHz and pulse length tau = 200 ns. Threshold current densities of the order J(th) = 280 A/cm(2) and differential efficiency eta = 0.40 W/A were obtained for devices with cavities of 700 mum in length and broad contacts of 100 mum in width.

引用

页码：267 / 271

页数：5