Electronic structure of Pt/HfO2 interface with oxygen vacancy

被引:6
|
作者
Cho, Eunae [1 ]
Han, Seungwu [1 ]
机构
[1] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea
关键词
First-principles calculation; Metal-oxide interface; Oxygen vacancy; Charge transfer; INITIO MOLECULAR-DYNAMICS; METAL;
D O I
10.1016/j.mee.2009.11.009
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using first-principles calculations, we study the electronic structures of Pt/HfO2 interface in the presence of oxygen vacancy. The energetics and charge transfer are examined when the oxygen vacancy is at various distances from the interface. It is found that the oxygen vacancy is strongly attracted to the interface and the charge transfer decreases monotonically as the vacancy moves away from the interface, albeit the amount of charge transfer is small. The charge transfer results in the decrease of the effective work function of Pt, consistent with the vacancy mechanism to explain the shift in the flat-band voltage. (C) 2009 Published by Elsevier B.V.
引用
收藏
页码:3407 / 3410
页数:4
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